Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip.
Identifieur interne : 000A42 ( Main/Exploration ); précédent : 000A41; suivant : 000A43Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip.
Auteurs : RBID : pubmed:22714153English descriptors
- KwdEn :
- Arsenicals (chemistry), Equipment Design, Equipment Failure Analysis, Gallium (chemistry), Indium (chemistry), Infrared Rays, Light, Photometry (instrumentation), Refractometry (instrumentation), Scattering, Radiation, Semiconductors, Silicon (chemistry), Surface Plasmon Resonance (instrumentation), Systems Integration.
- MESH :
- chemical , chemistry : Arsenicals, Gallium, Indium, Silicon.
- instrumentation : Photometry, Refractometry, Surface Plasmon Resonance.
- Equipment Design, Equipment Failure Analysis, Infrared Rays, Light, Scattering, Radiation, Semiconductors, Systems Integration.
Abstract
In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3 µm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2 µm.
PubMed: 22714153
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip.</title><author><name sortKey="Gassenq, Alban" uniqKey="Gassenq A">Alban Gassenq</name><affiliation wicri:level="1"><nlm:affiliation>. Photonics Research Group, INTEC Department, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, 9000 Ghent, Belgium. alban.gassenq@intec.ugent.be</nlm:affiliation><country xml:lang="fr">Belgique</country><wicri:regionArea>. Photonics Research Group, INTEC Department, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, 9000 Ghent</wicri:regionArea></affiliation></author><author><name sortKey="Hattasan, Nannicha" uniqKey="Hattasan N">Nannicha Hattasan</name></author><author><name sortKey="Cerutti, Laurent" uniqKey="Cerutti L">Laurent Cerutti</name></author><author><name sortKey="Rodriguez, Jean Batiste" uniqKey="Rodriguez J">Jean Batiste Rodriguez</name></author><author><name sortKey="Tournie, Eric" uniqKey="Tournie E">Eric Tournié</name></author><author><name sortKey="Roelkens, Gunther" uniqKey="Roelkens G">Gunther Roelkens</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="RBID">pubmed:22714153</idno><idno type="pmid">22714153</idno><idno type="wicri:Area/Main/Corpus">000C42</idno><idno type="wicri:Area/Main/Curation">000C42</idno><idno type="wicri:Area/Main/Exploration">000A42</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenicals (chemistry)</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Gallium (chemistry)</term><term>Indium (chemistry)</term><term>Infrared Rays</term><term>Light</term><term>Photometry (instrumentation)</term><term>Refractometry (instrumentation)</term><term>Scattering, Radiation</term><term>Semiconductors</term><term>Silicon (chemistry)</term><term>Surface Plasmon Resonance (instrumentation)</term><term>Systems Integration</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Arsenicals</term><term>Gallium</term><term>Indium</term><term>Silicon</term></keywords><keywords scheme="MESH" qualifier="instrumentation" xml:lang="en"><term>Photometry</term><term>Refractometry</term><term>Surface Plasmon Resonance</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Infrared Rays</term><term>Light</term><term>Scattering, Radiation</term><term>Semiconductors</term><term>Systems Integration</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3 µm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2 µm.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22714153</PMID><DateCreated><Year>2012</Year><Month>06</Month><Day>20</Day></DateCreated><DateCompleted><Year>2012</Year><Month>11</Month><Day>06</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN><JournalIssue CitedMedium="Internet"><Volume>20</Volume><Issue>11</Issue><PubDate><Year>2012</Year><Month>May</Month><Day>21</Day></PubDate></JournalIssue><Title>Optics express</Title><ISOAbbreviation>Opt Express</ISOAbbreviation></Journal><ArticleTitle>Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip.</ArticleTitle><Pagination><MedlinePgn>11665-72</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1364/OE.20.011665</ELocationID><Abstract><AbstractText>In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3 µm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2 µm.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Gassenq</LastName><ForeName>Alban</ForeName><Initials>A</Initials><Affiliation>. Photonics Research Group, INTEC Department, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, 9000 Ghent, Belgium. alban.gassenq@intec.ugent.be</Affiliation></Author><Author ValidYN="Y"><LastName>Hattasan</LastName><ForeName>Nannicha</ForeName><Initials>N</Initials></Author><Author ValidYN="Y"><LastName>Cerutti</LastName><ForeName>Laurent</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>Rodriguez</LastName><ForeName>Jean Batiste</ForeName><Initials>JB</Initials></Author><Author ValidYN="Y"><LastName>Tournié</LastName><ForeName>Eric</ForeName><Initials>E</Initials></Author><Author ValidYN="Y"><LastName>Roelkens</LastName><ForeName>Gunther</ForeName><Initials>G</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Opt Express</MedlineTA><NlmUniqueID>101137103</NlmUniqueID><ISSNLinking>1094-4087</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Arsenicals</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-00-0</RegistryNumber><NameOfSubstance>gallium arsenide</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-11-3</RegistryNumber><NameOfSubstance>indium arsenide</NameOfSubstance></Chemical><Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber><NameOfSubstance>Gallium</NameOfSubstance></Chemical><Chemical><RegistryNumber>Z4152N8IUI</RegistryNumber><NameOfSubstance>Silicon</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Arsenicals</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Infrared Rays</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Light</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Photometry</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Refractometry</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Scattering, Radiation</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Semiconductors</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Silicon</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Surface Plasmon Resonance</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Systems Integration</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>6</Month><Day>21</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>6</Month><Day>21</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>11</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">233145</ArticleId><ArticleId IdType="pubmed">22714153</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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